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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF450M SFF450Z DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFF450 __ __ __ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight Leads 13 AMP / 500 Volts 0.4 N-Channel POWER MOSFET Features: * * * * * * * * * * * Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals Available for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IRFM450 Types DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continuous Collector Current Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Total Device Dissipation TO-254 (M) Symbol VDS VGS ID Top & Tstg RJC TC = 25C TC = 55C TO-254Z (Z) Value 500 20 13 -55 to +150 1 125 95 Units Volts Volts Amps C C/W W PD For Pin Out Configuration and Optional Lead Bend, Se Page 3. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF450M SFF450Z Electrical Characteristics @ TJ = 25C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 A) Drain to Source On State Resistance (VGS=10 V, ID= 7.2 A) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10 V) Gate Threshold Voltage (VDS=VGS, ID= 250 A) Forward Transconductance (VDS 50 V, IDS= 7.2 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25C) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25C IF= Rated ID di/dt=100A/sec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS=10 Volts 80% rated VDS Rated ID VDD=50% Rated VDS 50% Rated ID RG= 6.2 PD= 20 W Symbol BVDSS RDS(on) ID(on) VGS(th) gfs IDSS Min 500 -- 13 2.0 8.7 -- -- -- -- -- -- -- -- -- -- -- -- 280 3.2 -- -- -- Typ -- 0.35 -- -- 131 -- -- -- -- 83 11 42 18 44 70 40 -- 580 6.7 2700 350 75 Max -- 0.40 -- 4.0 -- 250 1000 +100 -100 120 17 64 27 66 100 60 1.4 1200 14 -- -- -- Units Volts A V mho A IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD trr QRR Ciss Coss Crss nA nC nsec V nsec C pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF450M; SFF450MDB; SFF450MUB; SFF450Z; SFF450ZDB; SFF450ZUB; PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF450M SFF450Z Case Outline: TO-254 (M) O.150 .139 .685 .665 .750 .500 PIN 3 .545 .535 2x .155 .145 PIN 2 PIN 1 3x O.045 .035 .545 .535 .270 .240 .155 .140 .050 .040 .800 .790 SUFFIX: MDB SUFFIX: MUB Case Outline: TO-254Z (Z) PIN 3 PIN 2 PIN 1 SUFFIX: ZDB SUFFIX: ZUB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC |
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